UTC-Photomixer module

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Photonic generation of THz signals is promising for various applications. The uni-travelling-carrier (UTC) photomixer is one of the best solutions, because it provides a high 3 dB down bandwidth and high-saturation-output power simultaneously.
NTT Electronics have developed two types of UTC photomixer modules. One is a compact rectangular-waveguide-coupled photomixer, and another is an antenna-integrated photomixer module.

FEATURES

  • Efficient CW THz generation
  • Rectangular waveguide coupled photomixer
    75 to 380 GHz with 4 types of W-, F-, D-, J-band photomixer
  • Antenna-integrated photomixer (quasi-photonic type)
    250 to 3000 GHz or higher

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SPECIFICATIONS

Type* Model Frequency Output Power
Min Center Max Unit Min Typ Unit
W IOD-PMW-13001 75 90 110 GHz -8.0 -5.0 dBm
IOD-PMF-13001 90 115 140 GHz -8.0 -5.0 dBm
IOD-PMD-14001 110 140 170 GHz -9.0 -6.0 dBm
IOD-PMJ-13001 280 330 380 GHz -18.0 -11.0 dBm
A IOD-PMAN-13001 300 - 2500 GHz -34.0 -28.0 dBm

*) W-type is a waveguide coupled type photomixer. Output power is measured at the centre frequency.
A-type is an antenna-integrated photomixer. Output power is defined as the maximum power.

FMB diode module

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Femi-level managed barrier (FMB) diode module is an ultra-low noise THz detector based on InP/InGaAs heterostructure. Instead of metal/semiconductor interface in a Schottky barrier diode (SBD), InGaAs/InP hetero-interface (barrier height ~ 100meV) is used in an FMB diode.
This low barrier height provides a low diode differential resistance (Rd) and good impedance matching between a diode and a broadband bowtie antenna.

FEATURES

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The heterobarrier structure consists of n-InGaAs, undoped-InP, and n-InP layers. As the Fermi level in highly doped n-InGaAs can be located far above the conduction band edge depending on the carrier density, the barrier height at the hetero-interface (ΦBn) can be lowered to 100meV or less. Due to the low barrier-height, the FMB diode results in a good NEP of about 5.0pW/Hz0.5.

FMB diode with OP Amp.

product imageIOD-FMB-18001

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The IOD-FMB-18001 module is ideal for applying square-law detection with ultra low noise. The voltage sensitivity obtained was as high as 2MV/W at 300GHz, and 0.2MV/W at1THz.

The noise equivalent powers (NEPs) were estimated to be as low as 5.0pW/Hz0.5 at 300GHz, and 45pW/Hz0.5 at 1THz.

FMB diode with TIA

product imageIOD-FMB-19001

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The IOD-FMB-19001 is the quasi-optical FMB diode module with a broadband transimpedance amplifier (TIA). The module exhibited a differential voltage sensitivity of about 17kV/W at 300GHz in the square-law detection mode and an IF bandwidth of about 11GHz in the heterodyne detection mode. For 300GHz operation, the lowest NEP obtained was about 1.1x10-18W/Hz with an LO power of only about 6μW.

SPECIFICATIONS

Item Spec
Model IOD-FMB-18001 IOD-FMB-19001
Module configuration Zero-bias FMB diode with op-amp Zero-bias FMB diode with TIA
Antenna type Self-complimentary bow-tie antenna Self-complimentary bow-tie antenna
Lens type and diameter Hyper-hemispherical (10mm dia.) Hyper-hemispherical (10mm dia.)
Terahertz bandwidth > 200GHz > 200GHz
Pre amplifier type Low-noise operational amplifier Transimpeadance amplifier
Pre amplifier bandwidth 20Hz - 15kHz 30kHz - 11.8GHz
Output connector SMA (Female) SMPx2 (male, differential output)
Noise equivalent power
(NEP)
5pW/sqrt(Hz) @300GHz
45pW/sqrt(Hz) @1000GHz
15pW/sqrt(Hz) @300GHz
Voltage sensitivity 2MV/W @300GHz
0.2MV/W@1000GHz
17kV/W @300GHz
Electrical power supply DC±5V DC+3.3V

DIMENSIONS

IOD-FMB-18001

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IOD-FMB-19001

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