The heterobarrier structure consists of n-InGaAs, undoped-InP, and n-InP layers. As the Fermi level in highly doped n-InGaAs can be located far above the conduction band edge depending on the carrier density, the barrier height at the hetero-interface (ΦBn) can be lowered to 100meV or less. Due to the low barrier-height, the FMB diode results in a good NEP of about 5.0pW/Hz0.5.
UTC-Photomixer module
Photonic generation of THz signals is promising for various applications. The uni-travelling-carrier (UTC) photomixer is one of the best solutions, because it provides a high 3 dB down bandwidth and high-saturation-output power simultaneously.
NTT Innovative Devices have developed two types of UTC photomixer modules. One is a compact rectangular-waveguide-coupled photomixer, and another is an antenna-integrated photomixer module.
FEATURES
- Efficient CW THz generation
- Rectangular waveguide coupled photomixer
75 to 380 GHz with 4 types of W-, F-, D-, J-band photomixer - Antenna-integrated photomixer (quasi-photonic type)
250 to 3000 GHz or higher
SPECIFICATIONS
| Type* | Model | Frequency | Output Power | |||||
|---|---|---|---|---|---|---|---|---|
| Min | Center | Max | Unit | Min | Typ | Unit | ||
| W | IOD-PMW-13001 | 75 | 90 | 110 | GHz | -8.0 | -5.0 | dBm |
| IOD-PMF-13001 | 90 | 115 | 140 | GHz | -8.0 | -5.0 | dBm | |
| IOD-PMD-14001 | 110 | 140 | 170 | GHz | -9.0 | -6.0 | dBm | |
| IOD-PMJ-13001 | 280 | 330 | 380 | GHz | -18.0 | -11.0 | dBm | |
| A | IOD-PMAN-13001 | 300 | - | 2500 | GHz | -34.0 | -28.0 | dBm |
*) W-type is a waveguide coupled type photomixer. Output power is measured at the centre frequency.
A-type is an antenna-integrated photomixer. Output power is defined as the maximum power.
FMB diode module
Femi-level managed barrier (FMB) diode module is an ultra-low noise THz detector based on InP/InGaAs heterostructure. Instead of metal/semiconductor interface in a Schottky barrier diode (SBD), InGaAs/InP hetero-interface (barrier height ~ 100meV) is used in an FMB diode.
This low barrier height provides a low diode differential resistance (Rd) and good impedance matching between a diode and a broadband bowtie antenna.
FEATURES
FMB diode with OP Amp.
IOD-FMB-18001
The IOD-FMB-18001 module is ideal for applying square-law detection with ultra low noise. The voltage sensitivity obtained was as high as 2MV/W at 300GHz, and 0.2MV/W at1THz.
The noise equivalent powers (NEPs) were estimated to be as low as 5.0pW/Hz0.5 at 300GHz, and 45pW/Hz0.5 at 1THz.
FMB diode with TIA
IOD-FMB-19001
The IOD-FMB-19001 is the quasi-optical FMB diode module with a broadband transimpedance amplifier (TIA). The module exhibited a differential voltage sensitivity of about 17kV/W at 300GHz in the square-law detection mode and an IF bandwidth of about 11GHz in the heterodyne detection mode. For 300GHz operation, the lowest NEP obtained was about 1.1x10-18W/Hz with an LO power of only about 6μW.
SPECIFICATIONS
| Item | Spec | |
|---|---|---|
| Model | IOD-FMB-18001 | IOD-FMB-19001 |
| Module configuration | Zero-bias FMB diode with op-amp | Zero-bias FMB diode with TIA |
| Antenna type | Self-complimentary bow-tie antenna | Self-complimentary bow-tie antenna |
| Lens type and diameter | Hyper-hemispherical (10mm dia.) | Hyper-hemispherical (10mm dia.) |
| Terahertz bandwidth | > 200GHz | > 200GHz |
| Pre amplifier type | Low-noise operational amplifier | Transimpeadance amplifier |
| Pre amplifier bandwidth | 20Hz - 15kHz | 30kHz - 11.8GHz |
| Output connector | SMA (Female) | SMPx2 (male, differential output) |
| Noise equivalent power (NEP) |
5pW/sqrt(Hz) @300GHz 45pW/sqrt(Hz) @1000GHz |
15pW/sqrt(Hz) @300GHz |
| Voltage sensitivity | 2MV/W @300GHz 0.2MV/W@1000GHz |
17kV/W @300GHz |
| Electrical power supply | DC±5V | DC+3.3V |
DIMENSIONS
IOD-FMB-18001
IOD-FMB-19001
